silicon multi-epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8313 issue 1 page 1 of 3 BUP52 ? low v ce(sat) , fast switching. ? hermetic to3 metal package. ? ideally suited for motor control, switching and linear applications ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cex collector ? emitter voltage v be = -1.5v 300v v ceo collector ? emitter voltage 200v v ebo emitter ? base voltage 10v i c continuous collector current 70a i cm peak collector current 90a p d total power dissipation at t c = 25c 300w derate above 25c 1.72w/c t j junction temperature range -55 to +200c t stg storage temperature range -55 to +200c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 0.58 c/w
silicon multi-epitaxial npn transistor BUP52 semelab semelab semelab semelab limited limited limited limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8313 issue 1 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v ce = 300v v be = -1.5v 0.1 i cex collector cut-off current t c = 150c 5 i ebo emitter cut-off current v eb = 8v i c = 0 0.1 ma v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma 200 i c = 20a i b = 2a 0.5 i c = 40a i b = 4a 0.6 v ce(sat) (1) collector-emitter saturation voltage i c = 70a i b = 14a 0.9 i c = 20a i b = 2a 1.1 i c = 40a i b = 5a 1.2 v be(sat) (1) base-emitter saturation voltage i c = 70a i b = 15a 1.5 v i c = 20a v ce = 4v 20 i c = 40a v ce = 4v 12 h fe (1) forward-current transfer ratio i c = 70a v ce = 4v 8 dynamic characteristics t s storage time i c = 40a v cc = 200v 1.0 t f fall time i b1 = -i b2 = 10a 0.3 s notes notes notes notes (1) pulse width 300us, 2%
silicon multi-epitaxial npn transistor BUP52 semelab semelab semelab semelab limited limited limited limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8313 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) to3 (to - 204ae) pin 1 - base pin 2 - emitter case - collector 3 9 . 9 5 ( 1 . 5 7 3 ) m a x . 1 7 . 1 5 ( 0 . 6 7 5 ) 1 6 . 6 4 ( 0 . 6 5 5 ) 3 0 . 4 0 ( 1 . 1 9 7 ) 3 0 . 1 5 ( 1 . 1 8 7 ) 2 6 . 6 7 ( 1 . 0 5 0 ) m a x . 1 1 . 1 8 ( 0 . 4 4 0 ) 1 0 . 6 7 ( 0 . 4 2 0 ) 1 2 4 . 0 9 ( 0 . 1 6 1 ) 3 . 8 4 ( 0 . 1 5 1 ) d i a . 2 p l c s . 2 0 . 3 2 ( 0 . 8 0 0 ) 1 8 . 8 0 ( 0 . 7 4 0 ) d i a . 7 . 8 7 ( 0 . 3 1 0 ) 6 . 9 9 ( 0 . 2 7 5 ) 1 2 . 0 7 ( 0 . 4 7 5 ) 1 1 . 3 0 ( 0 . 4 4 5 ) 1 . 7 8 ( 0 . 0 7 0 ) 1 . 5 2 ( 0 . 0 6 0 ) 1 . 5 7 ( 0 . 0 6 2 ) 1 . 4 7 ( 0 . 0 5 8 ) d i a . 2 p l c s .
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